High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

• 1. 用于化学气相沉积金刚石膜的高功率微波等离子体反应装置 [P] . 中国专利： CN104388910B . 2016.08.31
• 2. 一种高功率的微波等离子体金刚石膜化学气相沉积装置 [P] . 中国专利： CN103305816B . 2015.07.15
• 3. HIGH GROWTH RATE HOMOEPITAXIAL DIAMOND FILM DEPOSIHIGH GROWTH RATE HOMOEPITAXIAL DIAMOND FILM DEPOSITION AT HIGH TEMPERATURES BY MICROWAVE PLASMA-ASSITION AT HIGH TEMPERATURES BY MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION STED CHEMICAL VAPOR DEPOSITION [P] . 世界知识产权组织专利： WO9629441A3 . 1997-02-20

  机译： 微波等离子体辅助化学气相沉积沉积的化学气相沉积在高温下的高温等离子体生长高同质金刚石薄膜沉积

• 4. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition [P] . AU5363096A . 1996-10-08

  机译： 微波等离子体辅助化学气相沉积在高温下高生长速率的同质外延金刚石膜沉积

• 5. HIGH GROWTH RATE HOMOEPITAXIAL DIAMOND FILM DEPOSITION AT HIGH TEMPERATURES BY MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION [P] . 世界知识产权组织专利： WO9629441A2 . 1996-09-26

  机译： 微波等离子体辅助化学气相沉积法在高温下高生长速率同质金刚石膜沉积

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• 5. Chemical kinetic calculations of the gas phase in atmospheric pressure microwave plasma-assisted chemical vapor deposition of diamond. [D] . Bastani-Parizi, Hamideh. 1993
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• 1. Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition [J] . Yan-zhao Guo ,Jun-jun Wei ,Jian-peng Xing . 矿物冶金与材料学报 . 2020,第005期
• 2. Nanocrystalline Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition and Its Biocompatible Property [J] . Jihan Yang ,Yongping Zhang . 材料物理与化学进展（英文） . 2018,第4期
• 3. 化学气相沉积单晶金刚石膜同质外延生长过程的动力学蒙特卡罗仿真:原子尺度三维动态可视化图像模型 [C] . 张禹 ,刘国权 ,安希忠 . 第九届中国体视学会与图像分析学术会议 . 2001
• 4. 微波等离子体化学气相沉积外延生长金刚石单晶的研究 [A] . 韩争 . 2014