Process to minimize a seam in tungsten filled contact holes

• 1. 一种连接孔的钨填充工艺方法 [P] . 中国专利： CN113013093A . 2021-06-22
• 2. 接触孔中具有钨间隔层的功率MOSFET器件及其制造方法 [P] . 中国专利： CN101930977B . 2012.07.04
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  机译： 具有氮化钛底层的钨填充的集成电路接触孔的回蚀工艺

• 4. Process for preparation of Al filled contact holes in a wafer using a vacuum coating useful in semiconductor technology giving quick and cost effective preparation of Al-filled contact holes in a semiconductor wafer [P] . 德国专利： DE10304103A1 . 2004-08-26

  机译： 使用在半导体技术中有用的真空涂层在晶片中制备铝填充的接触孔的方法，可以快速，经济地制备半导体晶片中的铝填充的接触孔

• 5. SEMICONDUCTOR DEVICE WITH VOID-FREE TUNGSTEN FILM COMPLETELY FILLED IN CONTACT HOLE AND MANUFACTURING METHOD THEREOF [P] . 韩国专利： KR20050022526A . 2005-03-08

  机译： 完全无孔钨膜填充的半导体器件及其制造方法

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