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Method for fabricating active devices on a thin membrane structure using porous silicon or porous silicon carbide
Method for fabricating active devices on a thin membrane structure using porous silicon or porous silicon carbide
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机译：使用多孔硅或多孔碳化硅在薄膜结构上制造有源器件的方法
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摘要
A method for fabricating semiconductor device comprises the steps of providing a substrate formed from a semiconductor material of a first conductivity type and converting a selected portion of the substrate to a porous semiconductor material. This partially forms a membrane-like structure of non-porous semiconductor material on the substrate. The porous semiconductor material is then oxidized to form a rigid layer of oxide material under the partially formed membrane-like structure. After forming the porous oxide material one or more integrated circuit elements can be fabricated on the partially formed membrane-like structure without fracturing it because rigid layer of oxide material operates to support it during the fabrication of the integrated circuit elements. Once the integrated circuit elements are fabricated, all or part of the rigid layer of oxide material is removed to complete the membrane-like structure and allow it to deflect in response to a force applied thereto.
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