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Solar cell mfg system - has interleaved thick-film and thin-film contacts at rear surface of doped silicon substrate with surface oxidation layer

机译：太阳能电池制造系统-在具有表面氧化层的掺杂硅基板背面具有交错的厚膜和薄膜触点

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摘要

The mfg. system, used to provide a solar cell without a front contact, employs a crystalline silicon substrate with a p-type conductivity. It is structured at the front surface and provided with an oxidation layer at the rear surface. Finger-shaped thick-film contacts (6) are applied to the rear surface using a metal paste containing Ag. Further finger-shaped metallic thin-film contacts are formed in openings in the oxidation layer, so that the fingers of the different contacts are interleaved. A highly doped p-type zone lies beneath the thick-film contacts. A highly doped n-type zone lies beneath the thin-film contacts, without any overlap between the doped zones.

机译：制造业。用于提供无正面接触的太阳能电池的系统采用具有p型导电性的晶体硅基板。它在前表面上构造，并在后表面上设有氧化层。手指状的厚膜触点（6）使用含Ag的金属糊涂到背面。在氧化层中的开口中形成另外的指状金属薄膜触点，使得不同触点的指交错。高掺杂的p型区位于厚膜触点下方。高掺杂的n型区位于薄膜触点下方，掺杂区之间没有任何重叠。

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公开/公告号DE19525720A1

专利类型
公开/公告日1997-01-16

原文格式PDF
申请/专利权人 SIEMENS SOLAR GMBH 80807 MUENCHEN DE;
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申请/专利号DE19951025720
发明设计人 HOLDERMANN KONSTANTIN DIPL.-CHEM.-ING. (FH) 89362 OFFINGEN DE;MUENZER ADOLF DIPL.-PHYS. 85716 UNTERSCHLEISHEIM DE;
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申请日1995-07-14
分类号H01L31/0224;H01L31/042;H01L31/18;
国家 DE
入库时间 2022-08-22 03:15:18

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