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Base composition for photolithography resist and resist material for photolithography patterning
Base composition for photolithography resist and resist material for photolithography patterning
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机译：用于光刻胶的基础组合物和用于光刻图案化的抗蚀剂材料
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摘要
It is possible to reduce adverse effects caused by the reflected light from the substrate and to perform pattern exposure of the photoresist layer with respect to the ultraviolet light without intermixing between layers or undesirable shape of notching, A grounding composition for forming a ground layer having a large selection ratio of etching rate between a patterned resist layer and an underlying layer in a dry etching treatment. The grounding composition of the present invention comprises (A) at least one non-A benzophenone compound or an aromatic azomethine compound having a substituted or alkyl-substituted amino group on an aryl group, and (B) a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atom in the molecule (A): (B) in a weight ratio of 1: 1 to 1:10.
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