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Pollution measurement system of ion implanter and method of pollution measurement

机译:离子注入机的污染测量系统及污染测量方法

摘要

The present invention relates to an ion implantation apparatus during the manufacturing process of a semiconductor device, and more particularly, to a contamination measurement system and a contamination measurement method of an ion implanter for continuously measuring the degree of contamination in an ion implantation apparatus.;Conventionally, the particle measurement method consumes bare wafers every time a particle is tested. Since the ongoing process must be stopped during the measurement, loss of the operation efficiency of the equipment and economic loss are caused. As a result, There was a problem of deteriorating.;In order to overcome the above-described problems, the present invention provides a sensor for detecting particles in the process chamber of the ion implanter, and outputs the detected particles through output means, thereby managing particles at the same time as the process progresses, By managing the particles, it is possible to improve the efficiency of the equipment operation and to improve the yield and the quality of the product.
机译:离子注入装置技术领域本发明涉及一种在半导体装置的制造过程中的离子注入装置,更具体地,涉及一种用于连续地测量离子注入装置中的污染程度的离子注入机的污染度测量系统和污染度测量方法。传统上,每次测量颗粒时,颗粒测量方法都会消耗裸晶片。由于在测量过程中必须停止正在进行的过程,因此会导致设备运行效率的损失和经济损失。结果,存在恶化的问题。为了克服上述问题,本发明提供了一种用于检测离子注入机的处理室中的颗粒的传感器,并通过输出装置将检测到的颗粒输出,从而在处理过程中同时管理粒子,通过管理粒子,可以提高设备操作的效率,并提高产量和产品质量。

著录项

  • 公开/公告号KR970053215A

    专利类型

  • 公开/公告日1997-07-29

    原文格式PDF

  • 申请/专利权人 김광호;

    申请/专利号KR19950046228

  • 发明设计人 권재선;김원영;체승기;김치선;

    申请日1995-12-02

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-22 03:16:42

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