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Manufacturing method of thallium pentoxide thallium (Ta_2O_5) dielectric film capacitor
Manufacturing method of thallium pentoxide thallium (Ta_2O_5) dielectric film capacitor
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机译:五氧化二Ta(Ta_2O_5)介电膜电容器的制造方法
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摘要
Thallium pentoxide thallium (Ta2O5The present invention relates to a method of manufacturing a capacitor of a semiconductor device for suppressing the growth of an interfacial oxide film on a surface of a lower electrode of a capacitor having a high dielectric constant film.;Ta2O5In the pretreatment method for gene formation, nitridation and oxygen heat treatment are successively performed not on a purely nitrided surface in order to sufficiently form the lower electrode surface as an oxygen barrier so as to have a Sion surface The interfacial oxide film growth was suppressed and the leakage current (Leakage Current) was reduced to improve the electrical characteristics of the capacitor.
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机译:五氧化hall(Ta 2 Sub> O 5 Sub>)本发明涉及一种用于抑制半导体器件表面上的界面氧化膜的生长的半导体器件的电容器的制造方法。 Ta 2 Sub> O 5 Sub>在形成基因的预处理方法中,先不进行氮化和氧热处理为了充分地形成下电极表面作为氧阻挡层以具有Sion表面,可以使用纯氮化物表面。抑制了界面氧化物膜的生长,并降低了漏电流(Leakage Current)以改善电容器的电特性。
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