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PLASMA REACTOR IN WHICH PLASMA HOMOGENEITY IS ENHANCED BY ADDITION OF GAS, REDUCTION OF CHAMBER DIAMETER AND REDUCTIONOF RF WAFER PEDESTAL DIAMETER
PLASMA REACTOR IN WHICH PLASMA HOMOGENEITY IS ENHANCED BY ADDITION OF GAS, REDUCTION OF CHAMBER DIAMETER AND REDUCTIONOF RF WAFER PEDESTAL DIAMETER
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机译：通过添加气体，减小腔室直径和减小射频晶片底座直径来增强血浆均质性中的等离子体反应器
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摘要
PROBLEM TO BE SOLVED: To improve uniformity of a plasma ion and a radical of the whole surfaces of a semiconductor wafer or a workpiece in an RF plasma reactor. SOLUTION: Density of an ion and a radical of a kind of etchant (such as chlorine) are reduced in the vicinity of an end surface (the edge) of a wafer, and reduction in the wafer center is not accompanied, and uniformity of etching speed is improved. This is realized by diluting the etchant (chlorine) by diluent gas (for example, hydrogen bromide) of not actually etching silicon in the vicinity of the end surface periphery 125a of a wafer 125. The chlorine in the wafer center is further rapidly dissociated, and local etching speed is increased, and dissociation of the chlorine in the vicinity of the wafer end surface periphery is not promoted, and uniformity of etching speed is improved. For this, inert gas is introduced to the vicinity of the wafer center.
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