首页>
外国专利>
Strained layer InGaAs quantum well semiconductor laser on GaAs substrate with quantum well-barrier layer interface structure
Strained layer InGaAs quantum well semiconductor laser on GaAs substrate with quantum well-barrier layer interface structure
展开▼
机译：具有量子阱-势垒层界面结构的GaAs衬底上的应变层InGaAs量子阱半导体激光器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor double heterostructure formed on a GaAs substrate having an off (100) plane slightly tilted toward a predetermined direction, the double heterostructure including an InGaAs quantum well active strained layer sandwiched between potential barrier layers and including an interface between the InGaAs quantum well active strained layer and an upper potential barrier layer grown on the active strained layer, wherein the interface has a periodical ridge-like bunching structure comprising quadrilateral waveform parts and triangular waveform parts, each of the quadrilateral waveform parts comprises a series of a bottom terrace of the just (100) plane, a reverse direction multiple step plane largely tilted from (100) direction toward the opposite direction to the predetermined direction, a top terrace of the just (100) plane and a forward direction multiple step plane largely tilted from (100) direction toward the predetermined direction, each of the triangular waveform parts comprises the just (100) plane terrace and the forward direction multiple step plane largely tilted from (100) direction toward the predetermined direction.
展开▼
