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Dry etching process for gallium arsenide.
Dry etching process for gallium arsenide.
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机译:砷化镓的干法蚀刻工艺。
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摘要
PURPOSE:To perform selective dry etching which is less in working damage on GaAs of AlGaAs without using any CFC gas. CONSTITUTION:This selective dry etching method performs selective dry etching by using the mixture of chlorine gas and sulfur hexafluoride gas as the etching gas. When this selective dry etching method is applied, high selectivity is obtained without using any CFC gas at the time of performing selective dry etching of a GaAs semiconductor crystal against an AlGaAs semiconductor crystal. In addition, since no plasma polymerized film is formed, the working can be performed with low ion energy and low-damage working can be realized.
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