首页> 外国专利> A method of depositing a thin layer on a substrate using a remote cooling nitrogen plasma (Method for thin film deposition on a substrate using a remote cold nitrogen plasma)

A method of depositing a thin layer on a substrate using a remote cooling nitrogen plasma (Method for thin film deposition on a substrate using a remote cold nitrogen plasma)

机译:使用远程冷却氮等离子体在基板上沉积薄层的方法(使用远程冷氮等离子体在基板上沉积薄膜的方法)

摘要

In a method of applying a thin layer to a metal, organic or inorganic substrate 12, a remote cooling nitrogen plasma, essentially consisting of glass nitrogen atoms, is generated in the vessel 5 in which the substrate 12 is located.;In order to form the protective layer, a gaseous organosilicon compound or organic germanium compound containing CH, Si (or Ge), O or NH groups is introduced into the vessel 5 during the formation of the remote nitrogen plasma. In order to form a thin dielectric layer, an organometallic compound may be further added.
机译:在将薄层施加到金属,有机或无机衬底12上的方法中,在衬底12所位于的容器5中产生基本上由玻璃氮原子组成的远程冷却氮等离子体。在形成远程氮等离子体期间,将保护层,包含CH,Si(或Ge),O或NH基团的气态有机硅化合物或有机锗化合物引入到容器5中。为了形成薄的介电层,可以进一步添加有机金属化合物。

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