首页> 外国专利> FINE STRUCTURE, ITS FORMATION, ATOMIC FORCE MICROSCOPE USING THE STRUCTURE, SCANNING TUNNEL CURRENT MICROSCOPE AND LIGHT DEFLECTING APPARATUS

FINE STRUCTURE, ITS FORMATION, ATOMIC FORCE MICROSCOPE USING THE STRUCTURE, SCANNING TUNNEL CURRENT MICROSCOPE AND LIGHT DEFLECTING APPARATUS

机译:精细结构,其形成,使用该结构的原子力显微镜,扫描隧道电流显微镜和光偏转装置

摘要

PURPOSE: To lessen the breaking at the time of formation and improve the precision and yeild ratio by sticking two substrates for which etching process is carried out to each other in the sides on which the grooves for a fine structure are formed and etching and removing a part from a substrate plane formed by a first etching. ;CONSTITUTION: A silicon nitride film 302 is formed as a thin film on a substrate 301 on which a fine structure is to be formed by LPCVD film forming method from dichlorosilane and ammonia gas. Then, a resist mask is formed by a mask aligner apparatus and a part 303 to be etched of the nitride film is removed by reactive ion etching. Next, etching is carried out by a heated aqueous solution of potassium hydroxide to form a frame body part 309. Further, a silicon oxide film is formed on another structure holding substrate 306 by sputtering and a cantilever seat part 307 is formed by ion milling method. Then, the substrates 301 and 306 are stuck mutually. After that, etching is carried out to separate the frame body part 309 and the cantilever part 308 and the frame body part 309 is removed.;COPYRIGHT: (C)1996,JPO
机译:用途:通过在形成精细结构的凹槽的侧面上相互粘贴进行了蚀刻处理的两个基板,并蚀刻和去除涂层,以减少形成时的断裂并提高精度和成品率。部分通过第一蚀刻形成于衬底平面。组成:氮化硅膜302以薄膜形式形成在基板301上,在基板301上将通过LPCVD成膜方法由二氯硅烷和氨气形成精细结构。然后,通过掩模对准器设备形成抗蚀剂掩模,并通过反应离子蚀刻去除氮化膜的要蚀刻的部分303。接下来,通过加热的氢氧化钾水溶液进行蚀刻以形成框体部309。此外,通过溅射在另一结构保持基板306上形成氧化硅膜,并且通过离子铣削法形成悬臂座部307。 。然后,将基板301和306相互粘贴。之后,进行蚀刻以分离框架主体部分309和悬臂部分308,并去除框架主体部分309 。;版权所有:(C)1996,JPO

著录项

  • 公开/公告号JPH0815284A

    专利类型

  • 公开/公告日1996-01-19

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP19940153224

  • 申请日1994-07-05

  • 分类号G01N37/00;C23F1/00;

  • 国家 JP

  • 入库时间 2022-08-22 03:58:51

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