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FINE STRUCTURE, ITS FORMATION, ATOMIC FORCE MICROSCOPE USING THE STRUCTURE, SCANNING TUNNEL CURRENT MICROSCOPE AND LIGHT DEFLECTING APPARATUS
FINE STRUCTURE, ITS FORMATION, ATOMIC FORCE MICROSCOPE USING THE STRUCTURE, SCANNING TUNNEL CURRENT MICROSCOPE AND LIGHT DEFLECTING APPARATUS
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机译:精细结构,其形成,使用该结构的原子力显微镜,扫描隧道电流显微镜和光偏转装置
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摘要
PURPOSE: To lessen the breaking at the time of formation and improve the precision and yeild ratio by sticking two substrates for which etching process is carried out to each other in the sides on which the grooves for a fine structure are formed and etching and removing a part from a substrate plane formed by a first etching. ;CONSTITUTION: A silicon nitride film 302 is formed as a thin film on a substrate 301 on which a fine structure is to be formed by LPCVD film forming method from dichlorosilane and ammonia gas. Then, a resist mask is formed by a mask aligner apparatus and a part 303 to be etched of the nitride film is removed by reactive ion etching. Next, etching is carried out by a heated aqueous solution of potassium hydroxide to form a frame body part 309. Further, a silicon oxide film is formed on another structure holding substrate 306 by sputtering and a cantilever seat part 307 is formed by ion milling method. Then, the substrates 301 and 306 are stuck mutually. After that, etching is carried out to separate the frame body part 309 and the cantilever part 308 and the frame body part 309 is removed.;COPYRIGHT: (C)1996,JPO
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