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Method for manufacturing a trench in a substrate for use in smart- power technology
Method for manufacturing a trench in a substrate for use in smart- power technology
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机译：在衬底中制造用于智能功率技术的沟槽的方法
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摘要
A method for manufacturing a trench in a substrate that has at least a first silicon layer, an insulating layer and a second silicon layer is disclosed. A first trench etching through the first silicon layer down to the insulating layer is implemented using a trench mask. By reinforcing the trench mask with a non-conformally deposited protective layer, the insulating layer is etched through down to the second silicon layer in a second trench etching. The method is particularly suited for the manufacture of insulation trenches having integrated substrate contacting for smart-power technology on an SOI substrate.
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