首页> 外国专利> Dielectric breakdown prediction and dielectric breakdown life- time prediction using iterative voltage step stressing

Dielectric breakdown prediction and dielectric breakdown life- time prediction using iterative voltage step stressing

机译:使用迭代电压阶跃应力的介电击穿预测和介电击穿寿命预测

摘要

An accurate dielectric breakdown prediction method and a prediction method in which accurate time dependent dielectric breakdown (TDDB) characteristics can be obtained on the basis of dielectric breakdown prediction by a step stress method are provided. In this method, dielectric breakdown is predicted on the basis of a plurality of reference currents in accordance with an applied voltage, or a reference current I.sub.cr is varied as the function of the applied voltage. In the step stress TDDB prediction, a Chen-Holland-Hu model or improved Chen- Holland-Hu model is employed. Since TDDB characteristics can be obtained from only dielectric breakdown prediction, this method is advantageous for early reliability prediction.
机译:提供一种精确的介电击穿预测方法和一种预测方法,其中可以基于通过逐步应力法进行的介电击穿预测来获得精确的时间相关介电击穿(TDDB)特性。在该方法中,根据施加的电压,基于多个参考电流来预测介电击穿,或者参考电流Icr根据施加的电压而变化。在逐步应力TDDB预测中,采用Chen-Holland-Hu模型或改进的Chen-Holland-Hu模型。由于仅可以通过电介质击穿预测获得TDDB特性,因此该方法对于早期可靠性预测是有利的。

著录项

  • 公开/公告号US5420513A

    专利类型

  • 公开/公告日1995-05-30

    原文格式PDF

  • 申请/专利权人 MITSUBISHI DENKI KABUSHIKI KAISHA;

    申请/专利号US19930091359

  • 发明设计人 MIKIHIRO KIMURA;

    申请日1993-07-15

  • 分类号G01R27/02;G01R27/14;

  • 国家 US

  • 入库时间 2022-08-22 04:04:54

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