In a visible light semiconductor laser with (AlxGa1-x)0.5In0.5P (0 ≦ x ≦ 1) crystal layers (52, 54) and a process for growing an(AlxGa1-x)0.5In0.5P (0 ≦ x ≦ 1) crystal, a GaAs substrate (51) on which (AlxGa1-x)0.5In0.5P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (AlxGa1-x)0.5In0.5P. As a result, a bandgap energy Eg of the (AlxGa1-x)0.5In0.5P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio.
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