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Ultrashort light pulse semiconductor laser device and wavelength conversion type ultrashort light pulse generator

机译:超短光脉冲半导体激光装置及波长转换型超短光脉冲发生器

摘要

PURPOSE:To obtain short wavelength laser beam pulses having a high output and in a very short time by conducting mode locking by TM mode oscillation and coupling beam pulses with an optical guide type wave-length changing element. CONSTITUTION:Currents are injected to the active layer 10 of a semiconductor laser 16 from a power supply 38. Laser beams 40 emitted from a first end face 14 on which an antireflection film 15 is shaped are passed through a lens 42, a polarizer 44, through which only a TM polarizing component is passed, and an etalon 46 as a wave-length controller, and reflected by an external reflector 22 and fed back to the semiconductor laser 16. When inrush currents are modulated by the round trip frequency f=2L/C (in formula, C represents light velocity and L a distance between the end face 12 of the laser 16 and the reflector 22) of an external resonator, beam pulses 48 for a time (1ps or less) shorter than conventional devices are acquired. It is because the residual reflectivity of the antireflection film 18 is reduced at a TM mode. The beam pulses can be coupled directly with a wave changing element, thus acquiring short wave-length pulses having a high output.
机译:目的:通过以TM模式振荡进行锁模,并将光束脉冲与光导型波长改变元件耦合,以获得在短时间内具有高输出功率的短波长激光光束。构成:从电源38向半导体激光器16的有源层10注入电流。从形成有防反射膜15的第一端面14发射的激光束40穿过透镜42,偏振器44。仅TM偏振分量穿过其中,并且标准具46作为波长控制器通过该标准具,并通过外部反射器22反射并反馈到半导体激光器16。当浪涌电流由往返频率f = 2L调制时/ C(式中,C表示光速,L表示激光器16的端面12与反射镜22之间的距离),可得到比传统装置短时间(1ps或更短)的光束脉冲48 。这是因为在TM模式下抗反射膜18的剩余反射率降低。束脉冲可以直接与波改变元件耦合,从而获得具有高输出的短波长脉冲。

著录项

  • 公开/公告号JPH0793475B2

    专利类型

  • 公开/公告日1995-10-09

    原文格式PDF

  • 申请/专利权人 松下電器産業株式会社;

    申请/专利号JP19880299855

  • 发明设计人 藤田 俊弘;雄谷 順;

    申请日1988-11-28

  • 分类号H01S3/18;H01S3/085;H01S3/137;

  • 国家 JP

  • 入库时间 2022-08-22 04:26:42

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