首页> 外国专利> Magnetic recording medium comprising an underlayer and a cobalt samarium amorphous magnetic layer having a SmCo.sub.5 crystalline interface with the underlayer

Magnetic recording medium comprising an underlayer and a cobalt samarium amorphous magnetic layer having a SmCo.sub.5 crystalline interface with the underlayer

机译:磁记录介质,其包含底层和与该底层具有SmCo.sub.5晶体界面的钴sa非晶磁性层

摘要

The present invention pertains to a thin film media structure for low noise high density longitudinal magnetic recording. The thin film media structure is comprised of a substrate. The thin film media structure is also comprised of an underlayer in contact with the substrate. Additionally, the thin film media structure is comprised of a CoSm or a CoSmQ film in contact with the underlayer such that the underlayer is between the substrate and the CoSm or CoSmQ. In a preferred embodiment, the underlayer is made of Cr or W and there is additionally an overlayer in contact with the CoSm or CoSmQ film, an overcoat in contact with the overlayer and an organic lubricant disposed on the overcoat. The present invention also pertains to a low noise high coercivity media structure for longitudinal magnetic recording. The high coercivity media structure is comprised of a substrate. The high coercivity media structure is also comprised of a multi-magnetic layer comprised of at least two layers of an alloy of Co and Sm, or Co and Sm and Q with an intermediate layer therebetween, and an underlayer in contact with the substrate and between the substrate and one of the CoSm layers.
机译:本发明涉及用于低噪声高密度纵向磁记录的薄膜介质结构。薄膜介质结构由基板构成。薄膜介质结构还包括与基底接触的底层。另外,薄膜介质结构由与底层接触的CoSm或CoSmQ膜组成,以使底层位于基板与CoSm或CoSmQ之间。在优选的实施方案中,底层由Cr或W制成,并且另外存在与CoSm或CoSmQ膜接触的覆盖层,与覆盖层接触的覆盖层以及设置在覆盖层上的有机润滑剂。本发明还涉及用于纵向磁记录的低噪声高矫顽力介质结构。高矫顽力介质结构由基底组成。高矫顽力介质结构还包括多磁层,该多磁层包括以下至少两层:Co和Sm或Co和Sm和Q的合金以及在它们之间的中间层;以及与基底接触的底层和衬底和CoSm层之一。

著录项

  • 公开/公告号US5344706A

    专利类型

  • 公开/公告日1994-09-06

    原文格式PDF

  • 申请/专利权人 CARNEGIE MELLON UNIVERSITY;

    申请/专利号US19920975132

  • 发明设计人 E. M. T. VELU;DAVID N. LAMBETH;

    申请日1992-11-12

  • 分类号G11B5/00;

  • 国家 US

  • 入库时间 2022-08-22 04:31:12

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