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High aspect ratio metal microstructures and method for preparing the same

机译:高深宽比的金属微结构及其制备方法

摘要

High aspect ratio metal microstructures may be prepared by a method involvingPP(i) forming a layer of a photoresist on a substrate;PP(ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist;PP(iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; andPP(iv) optionally, stripping the photoresist remaining on the surface.PPSuch microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.
机译:高深宽比的金属微结构可通过以下方法制备:(P)(P)(i)在基板上形成一层光致抗蚀剂;(P)(P)(ii)以成像方式将其暴露在光化辐射下显影该曝光层以获得包含没有剩余光致抗蚀剂的区域和被光刻胶覆盖的区域的表面;(P)

(iii)金属化该表面以在没有剩余光致抗蚀剂的表面区域上形成金属层在残留在表面上的光刻胶区域的侧面上;以及这些微结构可用作电子发射器,各向异性高介电互连,x射线光刻的掩模,受控载流子。释放活性剂和超微电极阵列。

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