Method for delta-doping in GaAs epitaxial layer grown on silicon substrate by metalorganic chemical vapor deposition

• 1. 氮化镓外延层生长在硅衬底上的纵向型器件的制造方法 [P] . 中国专利： CN106971943B . 2019.11.19
• 2. 硅衬底上化合物半导体外延层生长方法及其器件结构 [P] . 中国专利： CN103915537B . 2017.04.19
• 3. METHOD FOR DELTA-DOPING IN GALLIUM ARSENIDE EPITAXIAL LAYER GROWN ON SILICON SUBSTRATE BY METALORGANIC CHEMICAL VAPOR DEPOSITION [P] . 日本专利： JPH0524978A . 1993-02-02

  机译： 金属化学气相沉积法在硅基体上生长砷化镓外延层中的δ掺杂方法

• 4. Method for forming a delta-doped layer by metal organic chemical vapor deposition of a GaAs epitaxial layer grown on a silicon substrate [P] . 韩国专利： KR930003245A . 1993-02-24

  机译： 通过在硅衬底上生长的GaAs外延层的金属有机化学气相沉积来形成δ掺杂层的方法

• 5. Method of forming a laminate of epitaxially grown cubic silicon carbide layers, and method of forming a substrate-attached laminate of epitaxially grown cubic silicon carbide layers [P] . 美国专利： US9732439B2 . 2017-08-15

  机译： 形成外延生长的立方碳化硅层的叠层的方法，以及形成衬底附着的外延生长的立方碳化硅层的叠层的方法

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• 6. Anomalous Hall Effect in InSb Layers Grown by Metalorganic Chemical VaporDeposition on GaAs Substrates [R] . Besikci, C., Choi, Y. H., Sudharsanan, R., 1993

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