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Group III and V elements deposition process for HEMT semiconductors - by multiple layer of indium phosphide deposition, then indium followed by indium arsenide layer with further group III and V element layers.
Group III and V elements deposition process for HEMT semiconductors - by multiple layer of indium phosphide deposition, then indium followed by indium arsenide layer with further group III and V element layers.
The deposition process is carried out on an InP substrate (11). A molecular layer of InP (12) is deposited, followed by a molecular layer of InAs (14). A further layer of InP (16a) is then deposited followed by a layer of PH3 + TMIn (16b). The second deposition layer of InAs acts as a film of protection to trap the escape of the first deposition layer of InP. ADVANTAGE- Traps escaping group V atom elements during processing , maintaining an abrupt transition.
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