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Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode

机译：离子敏感场效应晶体管。更高的可靠性-包括阱和CMOS结构基板中的二极管以及伪参比电极的静电保护

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摘要

Drain and source diffusion regions (3) are formed in a p-well (2) in an n-Si substrate (1), and bridged by a gate structure of thermal oxide (7) under a sandwich comprising a thin intermediate thermal oxide layer (9) between insulating layers of Si3N4 (8) and either Si3N4, Ta2O5 or Al2O3 (10). The pseudo-reference electrode (12) on the field oxide (6) makes contact with the electrolyte (17) and is protected electrostatically by Al contacts (11) with n+p and p+n diodes (4, 5). During the Al etching process some metal is left in situ (16) for the structuring of additional passivation (13). Encapsulation (15) is excluded from between edges (14). USE/ADVANTAGE - Pref. in measurement and control technology, improved insulator stability makes for more reliable operation and longer lifetime.

机译：漏极和源极扩散区（3）形成在n-Si衬底（1）的p阱（2）中，并通过热氧化物（7）的栅极结构在包含薄的中间热氧化物层的三明治结构下桥接（9）在Si3N4（8）的绝缘层和Si3N4，Ta2O5或Al2O3（10）的绝缘层之间。场氧化物（6）上的伪参比电极（12）与电解质（17）接触，并通过带有n + p和p + n二极管（4、5）的Al触点（11）进行静电保护。在铝蚀刻过程中，一些金属留在原处（16），以构成额外的钝化层（13）。从边缘（14）之间排除封装（15）。使用/优势-优选在测量和控制技术中，绝缘子稳定性的提高使操作更可靠，使用寿命更长。

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公开/公告号DE4232532A1

专利类型
公开/公告日1994-04-28

原文格式PDF
申请/专利权人 CENTRUM FUER INTELLIGENTE SENSORIK-ERFURT E.V. 99092 ERFURT DE;
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申请/专利号DE19924232532
发明设计人 SCHWARZROCK GUENTER O-5087 ERFURT DE;FREIWALD KARLHEINZ O-5082 ERFURT DE;MARXEN GERD O-5082 ERFURT DE;
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申请日1992-09-29
分类号H01L23/62;G01N27/414;H01L29/784;
国家 DE
入库时间 2022-08-22 04:36:05

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