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Selective precipitation of aluminium structures from the gas phase - using locally applied thin aluminium@ layers as catalysts in the pptn. process

机译:从气相中选择性沉淀铝结构-使用局部涂覆的薄铝层作为pptn中的催化剂。处理

摘要

Method comprises a) applying aluminium locally as thin layers onto a substrate; and b) precipitating aluminium from the gas phase selectively onto the caalytically acting layers until a desired height of the structure has been attained. The thin selective aluminium layers - prior to the second process step - are pref. either protected against oxidn. caused by air, or subjected to oxidn.. Selective application of thin aluminium layers in the first process step takes place as laser-aided coating from the gas phase, as thermal vaporisation with the use of masks, or as metallisation. USE/ADVANTAGE - For manufacture of semiconductor components and products. It simplifies the manufacturing process, and eliminates the need for palladium, platinum or gold as catalyst materials.
机译:该方法包括:a)将铝作为薄层局部地施加到基底上; b)将铝从气相中选择性地沉淀到催化作用层上,直到达到所需的结构高度。选择性的薄铝层-在第二个工艺步骤之前-是优选的。保护免受氧化。在第一步过程中,薄铝层的选择性涂覆是作为气相的激光辅助涂层,使用掩模进行的热汽化或金属化而进行的。使用/优点-用于制造半导体组件和产品。它简化了制造过程,并且不需要钯,铂或金作为催化剂材料。

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