首页> 外国专利> A semiconductor integrated circuit having a low power consumption voltage monitoring circuit for a built-in step-down voltage generator (a built-in step-down voltage generator for a low power consumption voltage monitoring circuit)

A semiconductor integrated circuit having a low power consumption voltage monitoring circuit for a built-in step-down voltage generator (a built-in step-down voltage generator for a low power consumption voltage monitoring circuit)

机译:具有用于内置降压电压发生器的低功耗电压监视电路的半导体集成电路(用于低功耗电压监视电路的内置降压电压发生器)

摘要

The semiconductor integrated circuit device of the present invention generates the internal reduction voltage Vint at the external voltage so as to selectively distribute the internal reduction voltage Vint and the external voltage to the circuit component and the reduction voltage generator 26 inside the circuit And two internal voltage generating circuits selectively enabled as the control signal Sdc for the standard data access mode and the burn-in test operation. The pre-monitoring circuit 24 of the circuit also activates the current mirror circuit 25a to generate the control signal Sdc when the external voltage Vext approaches the acceleration voltage range for the test operation, Thereby reducing the dash current in the standard data access mode.
机译:本发明的半导体集成电路装置在外部电压下产生内部降低电压Vint,从而将内部降低电压Vint和外部电压选择性地分配给电路内部的电路部件和降低电压生成器26以及两个内部电压。生成电路,有选择地将其用作标准数据访问模式和老化测试操作的控制信号Sdc。当外部电压Vext接近用于测试操作的加速电压范围时,电路的预监视电路24还激活电流镜电路25a以生成控制信号Sdc,从而在标准数据访问模式下减小了虚线电流。

著录项

  • 公开/公告号KR940020551A

    专利类型

  • 公开/公告日1994-09-16

    原文格式PDF

  • 申请/专利权人 세끼모또 다다히로;

    申请/专利号KR19940003542

  • 发明设计人 고시카와 야스지;

    申请日1994-02-26

  • 分类号H01L27/04;

  • 国家 KR

  • 入库时间 2022-08-22 04:37:27

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