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METHOD OF ANISOTROPICALLY ETCHING SILICON WAFERS AND WAFER ETCHING SOLUTION
METHOD OF ANISOTROPICALLY ETCHING SILICON WAFERS AND WAFER ETCHING SOLUTION
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机译:硅晶片的各向异性刻蚀方法及晶片刻蚀解决方案
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摘要
An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.
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