首页> 外国专利> Bidirectional MOS switch - includes multilayered structure, having alternate p=type and n=type layers, between two sets of contact and channel regions, with top and bottom p=type layers and one more p=type layer than n=type layer

Bidirectional MOS switch - includes multilayered structure, having alternate p=type and n=type layers, between two sets of contact and channel regions, with top and bottom p=type layers and one more p=type layer than n=type layer

机译：双向MOS开关-包括多层结构，在两组接触区和沟道区之间具有交替的p = type和n = type层，顶部和底部p = type层，而p = type层比n = type层多

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摘要

The MOS switch is formed in a semiconductor layer (2) on an insulating substrate (1), and includes two highly doped contact (3a, 3b) electrode areas (S1/D2, S2/D1). There are two MOS structures, with respective channel (6a, 6b) regions, of different conductivity to the contact regions, and control electrodes (8a, 8b). There are n N-type layers (5) and n+1 P-type layers (4) arranged on top of one another, between the contact areas, where n is an integer greater than or equal to 1. The bottom and top layers (4a, 4b) are P-type. The switch is pref. formed on an insulator e.g. diamond, sapphire or silicon dioxide.

机译：MOS开关形成在绝缘基板（1）上的半导体层（2）中，并且包括两个高掺杂触点（3a，3b）电极区域（S1 / D2，S2 / D1）。有两个MOS结构，分别具有与接触区域导电性不同的沟道（6a，6b）和控制电极（8a，8b）。在接触区域之间，彼此叠置有n个N型层（5）和n + 1个P型层（4），其中n是大于或等于1的整数。底层和顶层（4a，4b）是P型。开关是首选。形成在绝缘体上，例如钻石，蓝宝石或二氧化硅。

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公开/公告号SE501081C2

专利类型
公开/公告日1994-11-07

原文格式PDF
申请/专利权人 ASEA BROWN BOVERI AB;
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申请/专利号SE19930001007
发明设计人 PER *SVEDBERG;
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申请日1993-03-26
分类号H03K17/687;H01L29/78;
国家 SE
入库时间 2022-08-22 04:44:24

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