首页> 外国专利> PROCESS FOR CLEANING OXIDE METAL SURFACES IN THE MANUFACTURE OF INTERCONNECTION ARRAYS AND WAFERS FOR SUCH NETWORKS.

PROCESS FOR CLEANING OXIDE METAL SURFACES IN THE MANUFACTURE OF INTERCONNECTION ARRAYS AND WAFERS FOR SUCH NETWORKS.

机译：在此类网络的互连阵列和晶圆制造中清洁氧化金属表面的方法。

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摘要

The present invention relates to a method for cleaning oxidized metallized surfaces used in the manufacture of wafers for interconnection networks, comprising at least: a first metallized conductive layer, dielectric layer deposited on the metallized layer, then etched to strip the surfaces to be metallized or contact holes, and BR/ - a second metallized layer deposited on the etched surface, BR/ characterized in that the etched platelets are treated by multipolar microwave plasma under hydrogen before the deposition of the second metallized layer. BR/ It also relates to wafers for interconnection networks in which the metallized surfaces have been cleaned according to the invention. / P

机译：本发明涉及一种用于清洁用于互连网络的晶片的制造中的氧化的金属化表面的方法，该方法至少包括：第一金属化的导电层，沉积在金属化的层上的电介质层，然后被蚀刻以剥离要被金属化的表面或接触孔，和
-沉积在蚀刻表面上的第二金属化层，其特征在于，在沉积第二金属化层之前，在氢气下通过多极微波等离子体对蚀刻的血小板进行处理。
还涉及用于互连网络的晶片，其中根据本发明已经清洁了金属化表面。

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公开/公告号FR2677668A1

专利类型
公开/公告日1992-12-18

原文格式PDF
申请/专利权人 FRANCE TELECOM;
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申请/专利号FR19910007325
发明设计人 TEMPLIER FRANCOIS;TORRES JOAQUIM;PALLEAU JEAN;
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申请日1991-06-14
分类号H01L21/304;C23C14/02;C23G5/00;H01L21/3205;H01L21/321;H01L21/48;H01L21/768;H01L23/52;
国家 FR
入库时间 2022-08-22 05:00:13

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