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Pressure detecting circuit for semiconductor pressure sensor - has differential amplifier stage with zero drift compensation by temp.-dependent difference between base-emitter voltages
Pressure detecting circuit for semiconductor pressure sensor - has differential amplifier stage with zero drift compensation by temp.-dependent difference between base-emitter voltages
The pressure is measured in terms of the potential difference across one diagonal (3B-3C) of a resistance bridge (2A-2D) on a semiconductor chip with a signal processor (60) comprising a differential amplifier section, a bias current control section which sets the emitter currents of both transistors to produce an input-offset difference between their base-emitter voltages, and a power amplifier section. The temp. dependence of the input-offset voltage stabilises the null output voltage, and the conventional compensating resistance in parallel with one arm (2B) of the bridge is omitted. ADVANTAGE - Temp. dependence of null point output voltage is compensated without using resistance having small temp. coeffts.
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