首页> 外国专利> Thin, silicon-contg. organic layers prodn. - by irradiation of organo-silane(s)-alkoxy:silane(s) or -siloxane(s) with pulsed laser light of specified wavelength, pulse length, frequency and energy

Thin, silicon-contg. organic layers prodn. - by irradiation of organo-silane(s)-alkoxy:silane(s) or -siloxane(s) with pulsed laser light of specified wavelength, pulse length, frequency and energy

机译：薄的硅接触。有机层产品-通过用规定波长，脉冲长度，频率和能量的脉冲激光辐照有机硅烷-烷氧基：硅烷或-硅氧烷

页面导航

摘要
著录项
相似文献

摘要

Prodn. of thin Si-contg. organic layers on a substrate from the gas phase involves the photochemical reaction of organo-silanes, -alkoxysilanes or -siloxanes (I) in an inert atmos. under reduced pressure, by irradiation with one or more pulses of pulsed laser light with wavelength below 400 nm, pulse length 10 ps-1 ms, pulse frequency 1-300 Hz and mean energy density at least 1 ml/cm2. (I) are silanes of formula (R')nSiRa-n (with R = H, Me, vinyl or -(CH2)aX (with X = OH, NH2, COOH or glycidyll; R' = Ph; n = 1, 2 or 3), alkoxysilanes of formula (R')nSi(OR) 4 contg. at least one Ph gp. (with R = Me, Et or Ph; R' = H, Me, Et, vinyl, Ph or -(CHH2) = X (with X as above); n -1, 2 or 3) or siloxanes of formula R'R=SiO-(SiR2O)m -(SiRR'O)n-SiR2R' (with R = Me; R' = Me or Ph; n, m = O or above); reaction is carried out in argon at below 10 mbar, using pulsed laser light of wavelength 190-300 nm, in a direction mainly parallel to the substrate, pref. through a mask. USE/ADVANTAGE - The thin layers obtd. are useful as membrane layers for sensor technology (claimed). Provides a LCVD process for the prodn. of smooth, thin, transparnet, colourless Si-contg. layers without using sensitisers (contrast prior-art liq.-phase processes which give thick layers and require spin-coating, and gas-base processes which require sensitisers such as Hg and give brownish, semi-transparent coatings). Other applications inlcude surface coatings for implantable electrodes, dielectric layers for semiconductor components. etc

机译：产品薄硅连续。来自气相的基材上的有机层涉及惰性气氛中有机硅烷，-烷氧基硅烷或-硅氧烷（I）的光化学反应。在减压下，通过照射波长小于400 nm，脉冲长度10 ps-1 ms，脉冲频率1-300 Hz和平均能量密度至少1 ml / cm2的一个或多个脉冲激光进行照射。（I）是式（R'）nSiRa-n（R = H，Me，乙烯基或-（CH2）aX（X = OH，NH2，COOH或缩水甘油基; R'= Ph; n = 1， 2或3）中，式（R'）nSi（OR）4的烷氧基硅烷至少包含一个Ph gp。（其中R = Me，Et或Ph; R'= H，Me，Et，乙烯基，Ph或-（ CHH 2）= X（X为上述基团）; n -1、2或3）或式为R'R = SiO-（SiR2O）m-（SiRR'O）n-SiR2R'的硅氧烷（R = Me; R '= Me或Ph; n，m = O或更高）;在小于10 mbar的氩气中，使用波长为190-300 nm的脉冲激光，在基本上平行于基板的方向上进行反应，优选通过面膜用途/优点-薄的薄层可用作传感器技术的膜层（已声明），为不使用敏化剂的光滑，薄，透明，无色的硅接触层提供了LCVD工艺（对比之前现有技术的液相工艺，该工艺可形成厚层并需要旋涂，而气基工艺则需要使用诸如汞的敏化剂并获得褐色，半透明的涂层s）。其他应用包括可植入电极的表面涂层，半导体组件的介电层。等等

著录项

公开/公告号DE4126759A1

专利类型
公开/公告日1993-02-18

原文格式PDF
申请/专利权人 SIEMENS AG 8000 MUENCHEN DE;
展开▼

申请/专利号DE19914126759
发明设计人 HOFFMANN KLAUS-WERNER DIPL.-ING. 8521 WEISENDORF DE;ROTH WOLFGANG DIPL.-CHEM. DR. 8525 UTTENREUTH DE;
展开▼

申请日1991-08-13
分类号C23C16/48;C23C16/30;C09D183/00;
国家 DE
入库时间 2022-08-22 05:01:37

相似文献

专利
外文文献