首页> 外国专利> Mfr. of high temp. superconductors with melt-structured grain boundaries - comprises homogeneously distributing silver@ in film, heating superconducting part to 910-960 deg. C., cooling in inert atmos., then oxygen@ annealing

Mfr. of high temp. superconductors with melt-structured grain boundaries - comprises homogeneously distributing silver@ in film, heating superconducting part to 910-960 deg. C., cooling in inert atmos., then oxygen@ annealing

机译:制造商高温具有熔体结构晶界的超导体-包括在薄膜中均匀分布银,将超导部件加热到910-960度。 C.,在惰性气氛中冷却,然后氧气@退火

摘要

Mfr. of high temp. superconductors with melt structured grain boundaries consists of first forming a device from superconductor material or a material of corresponding compsn. and then annealing this. The features of the process are as follows: in the material which forms the device 1-50 wt.% Ag are present distributed homogeneously, the superconductor part is then heated to a temp. over 910 and not above 960 deg.C., and held there pref. for 5-20 hrs., the part is then cooled in inert gas with 0.01-1.0 vol.% O2, pref. 0.3-0.5 vol.% or with a change from a low to a high O2-content within the range quoted, at a rate of 0.5-10 deg.K. per hour, pref. 1-5 deg. K/hr., to a temp. of 890-910 deg.C. Then the standard O2 ambient anneal is carried out. Esp. claimed is the use of YBaCuOx with 3-10 wt.% Ag. The first anneal is pref. carried out at 920-940 deg.C. Also claimed is the process in which the part is first heated to a temp. of 935-960 deg.C., then cooled fast at a rate of 20-100 deg.K. per hour to a value between 910 and 935 deg.C. and held there for 5-20 hrs. USE/ADVANTAGE - The process generates parallel continuous crystals in a deposited film, some of which extend for the length of the part and have a width of 20-30 micron and thickness of 1 micron. The process is used to mfr. superconductor films on a Ag-substrate for use in magnets, electrical machines or energy transmission cables.
机译:制造商高温具有熔融结构化的晶界的超导体首先由超导体材料或具有相应成分的材料形成器件。然后将其退火。该方法的特征如下:在形成装置的材料中,以均匀分布的方式存在1-50重量%的Ag,然后将超导体部分加热到一定温度。高于910℃且不高于960℃,并保持在那里。然后将零件在含有0.01-1.0%(体积)O2(优选)的惰性气体中冷却5-20小时。 0.3-0.5 vol。%或在所述范围内以0.5-10 deg.K的速率从低到高的O2含量变化。每小时,首选1-5度K /小时,至温度890-910摄氏度然后进行标准的O2环境退火。 Esp。所要求保护的是使用具有3-10重量%的Ag的YBaCuOx。第一次退火是优选的。在920-940℃下进行。还要求保护的是首先将零件加热到一定温度的方法。于935-960℃的温度,然后以20-100℃的速度快速冷却。每小时的温度在910到935摄氏度之间。并在那里保持5-20小时。使用/优势-该工艺在沉积膜中生成平行的连续晶体,其中一些晶体延伸到零件的长度,宽度为20-30微米,厚度为1微米。该过程用于制造。用于磁体,电机或能量传输电缆的Ag基片上的超导膜。

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