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Appts. for measuring characteristic values of semiconductor wafer - employs homogeneous magnetic field and predefined test current to establish specific resistance and Hall coefft. of sample
Appts. for measuring characteristic values of semiconductor wafer - employs homogeneous magnetic field and predefined test current to establish specific resistance and Hall coefft. of sample
An appts. for measuring the characteristic properties of semiconductor wafer samples (1) as used in IC preparation applies a homogeneous magnetic field (B) at right angles to the path of a predefined test current (I) from a source (20). The test current (I) is applied via a pair of needle contacts (4,5) insulated from each other and a similar pair of contacts (6,7) enables a resultant voltage (U) to be observed at the voltmeter (21) via the changeover switch (19). A ohmic resistance at the contact points (9 to 12) is obtd. by adjusting the contact pressure in a predetermined position on the sample surface (8) which contains a zone of magnetic or electrical discontinuity. USE/ADVANTAGE - Establishes specific resistance and Hall coefft. as a mfg. control during dosing operations. Method can be applied to magnetic field measurements using semiconductor sensor with known response characteristics.
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