A method of depositing a silicon dioxide film at a low temperature of about 100C by LPCVD using an organic disilane source

• 1. 有机氨基乙硅烷前体和包含该前体的薄膜沉积的方法 [P] . 中国专利： CN105801612B . 2020.11.27
• 2. 有机氨基乙硅烷前体和包含该前体的薄膜沉积的方法 [P] . 中国专利： CN103450242B . 2018.05.01
• 3. Deposition of silicon dioxide films at temperatures as low as 100 C by LPCVD using organodisilane sources [P] . 欧洲知识产权局专利： EP0533129A3 . 1994-03-02

  机译： 使用有机乙硅烷源通过LPCVD在低至100 C的温度下沉积二氧化硅膜

• 4. Deposition of silicon dioxide films at temperatures as low as 100 C by LPCVD using organodisilane sources [P] . 欧洲知识产权局专利： EP0533129A2 . 1993-03-24

  机译： 使用有机乙硅烷源通过LPCVD在低至100 C的温度下沉积二氧化硅膜

• 5. Deposition of silicon dioxide films at temperatures as low as 100 degree C. by LPCVD using organodisilane sources [P] . 美国专利： US5204141A . 1993-04-20

  机译： 使用有机乙硅烷源通过LPCVD在低至100摄氏度的温度下沉积二氧化硅膜

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• 1. Structure and Properties of TiB_2 Thin Films Deposited at Low Temperatures Using RF Magnetron Sputtering [J] . 戴伟 ,张同俊 . 武汉理工大学学报：材料科学英文版 . 2008,第5期
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