首页>
外国专利>
Method and apparatus for microlithography using x-pinch x-ray source
Method and apparatus for microlithography using x-pinch x-ray source
展开▼
机译：使用x捏x射线源进行微光刻的方法和设备
展开▼
页面导航
摘要
著录项
相似文献
摘要
An x-ray microlithography method and apparatus for integrated circuit wafers is disclosed in which an isotropic x-ray source is formed at the cross point of two crossed conductors. When a high current is passed through the conductors they vaporize and breakdown to form an ionized plasma which is hot enough at the cross point that K-shell x-ray radiation is released uniformly in all directions. The magnetic pressure caused by the current flow at the cross point is strong enough to collapse or pinch the plasma radially so that the x-ray source spot is very small in size and can provide high resolution exposure of an integrated circuit photoresist pattern. Due to the isotropic nature of the x-ray source, multiple circuit wafers can be exposed with a single x- ray pulse by disposing them radially around the source. Sequential x-ray pulses can be obtained for a circuit wafer manufacturing line by employing mechanically mounted wires, crossed conductive liquid jets, or by employing a plurality of crossed conductor pairs disposed on a rolled substrate that is sequentially advanced into contact with current feeding conductors.
展开▼
