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Passivation of semiconductor surfaces after reactive plasma etching - involves additional plasma treatment using passivation mixture to replace reactive compounds adsorbed on the surface
Passivation of semiconductor surfaces after reactive plasma etching - involves additional plasma treatment using passivation mixture to replace reactive compounds adsorbed on the surface
Semiconductor device, contg. several layers, is placed in a plasma etch chamber and etched using a cpd., pref. a halogen - esp. Cl or Br - contg. cpd., which is corrosive for at least one of the layers on the wafer. A passivation medium, contg. SiF4 or a F-contg. cpd. and pref. at a high pressure of 0-1 Torr, is brought into the plasma region which essentially does not react with the semiconductor device, but removes the reactive cpd. to prevent corrosion of the device and can itself be removed easily from the etch region. At least one of the layers on the device is metal, pref. with a metal content of at least 80 wt.%, esp. at least 90 wt.% comprising the metals Al, Ti, W, Cu and Al-alloys with Ti, W and Si. The device being etched may have a photoresist layer. Also claimed is the use of a separate plasma chamber to carry out the passivation. USE/ADVANTAGE - The process removes reactive rests, formed during the surface layer etching and replaces them with non-corrosive fluorides. This results in less corrosion of the layers after removal from the plasma chamber and allows better control of the pattern dimensions in semiconductor mfr.
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