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Dry-developable negative resist systems - have irradiation-sensitive resist layer based on binding agent and X=ray or electron ray sensitive component, with additional polymer layer

机译：可干显影的负性光刻胶系统-具有基于粘合剂和X =射线或电子射线敏感组分的辐射敏感型抗蚀剂层，以及额外的聚合物层

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摘要

In dry-developable negative resist systems with very dry sensitivity for electron ray and X-ray lithography, the irradiation-sensitive resist layer based on a binding agent comprising a condensn. prod. of a cresol mixt. and formaldehyde, and an electron ray or X-ray sensitive component of formula (I) is covered with an additional polymer layer, where R = alkyl or H and D = a gp. of formula D1 or D2. The additional polymer layer pref. comprises a water-soluble polymer, pref. polyvinylpyrrolidone. The additional layer is removed prior to gas phase silylation using water. USE/ADVANTAGE - High selectivity of the gas phase silylation in the irradiated region is achieved, a negative image of large gradient is obtd., and sensitivity is enhanced. Useful for structuring of semiconductor materials in the direct write process or for prodn. of masks for photo- or X-ray lithograph. Useful in microelectronics.

机译：在对电子射线和X射线光刻具有非常干燥敏感性的可干显影负性抗蚀剂系统中，基于粘合剂的辐射敏感性抗蚀剂层基于包含冷凝物的粘合剂。产品甲酚混合物。式（I）的电子射线或X射线敏感组分被另外的聚合物层覆盖，其中R =烷基或H，D = gp。公式D1或D2。优选另外的聚合物层。包含水溶性聚合物，优选。聚乙烯吡咯烷酮。在用水进行气相甲硅烷基化之前，除去附加层。使用/优点-在照射区域实现了气相甲硅烷基化的高选择性，消除了大梯度的负像，并提高了灵敏度。对于直接写入过程中的半导体材料结构化或产品有用。用于照相或X射线光刻的掩模。在微电子学中很有用。

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公开/公告号DE4040117A1

专利类型
公开/公告日1992-06-17

原文格式PDF
申请/专利权人 FOTOCHEMISCHE WERKE GMBH O-1170 BERLIN DE;
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申请/专利号DE19904040117
发明设计人 MEHLISS GEORG O-1055 BERLIN DE;DIETRICH BURKHART PROF. DR.;ABRAHAM WERNER DR. O-1403 BIRKENWERDER DE;BAUER JOACHIM DR. O-1200 FRANKFURT DE;BAUCH LOTHAR DR. O-8046 DRESDEN DE;RICHTER KAROLA O-8035 DRESDEN DE;ROLL ECKHART O-8010 DRESDEN DE;BOETTCHER MONIKA;HELLER GUNHILD DR. O-8020 DRESDEN DE;
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申请日1990-12-13
分类号G03F7/039;G03F7/26;G03F7/11;
国家 DE
入库时间 2022-08-22 05:25:47

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