首页> 外国专利> Silicon@ wafer mfr. for high yield - by oxidising silicon@ disc, etching filling with silicon@, bonding with thick layer oxide layer and thinning for sepd. silicon areas

Silicon@ wafer mfr. for high yield - by oxidising silicon@ disc, etching filling with silicon@, bonding with thick layer oxide layer and thinning for sepd. silicon areas

机译：硅@晶圆制造商为了获得高产量-通过氧化硅@盘，蚀刻硅@填充物，与厚氧化层结合并减薄以形成隔垫。硅面积

页面导航

摘要
著录项
相似文献

摘要

Mfr. comprises oxidising Si disc to produce an oxide layer whose thickness corresp. to pref. thickness of the separate Si areas. Islands sepd. by oxide strips are etched into the layer and the regions between the strips are filled with Si, to give a plane surface. A oxide layer produced on a second Si disc is bonded to the plane surface and the first disc is trimmed to the thickness of the Si strips. ADVANTAGE - High yield.

机译：制造商包括氧化Si盘以产生厚度对应的氧化物层。偏好分开的硅区的厚度。离岛Sepd。通过氧化，将条带蚀刻到该层中，并且条带之间的区域填充有Si，以提供平坦的表面。在第二Si盘上产生的氧化物层结合到平面上，并且第一盘被修整至Si带的厚度。优势-高产量。

著录项

公开/公告号DE4033508C1

专利类型
公开/公告日1992-03-12

原文格式PDF
申请/专利权人 HOEFFLINGER PROF. DR. 7000 STUTTGART DE;
展开▼

申请/专利号DE19904033508
发明设计人 ZINGG RENE DR. 7037 MAGSTADT DE;HOEFFLINGER BERND DR. 7000 STUTTGART DE;APPEL WOLFGANG HEINRICH DR. 7141 SCHWIEBERDINGEN DE;GRAF HEINZ-GERD DIPL.-ING. 7250 LEONBERG DE;HARENDT CHRISTINE DR. 7130 MUEHLACKER DE;
展开▼

申请日1990-10-21
分类号H01L21/76;H01L21/302;
国家 DE
入库时间 2022-08-22 05:25:49

相似文献

专利
外文文献
中文文献