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Process and apparatus for producing epitaxial and/or highly textured grown film, free of foreign phases, of a high-T.sub.c -oxide superconductor on a substrate

机译:用于在基板上生产无异相的高Tc氧化物超导体的外延和/或高织构生长薄膜的方法和设备

摘要

A process for producing an epitaxial and/or highly texturized grown film, free of foreign phases, of a high-T.sub.c -oxide superconductor on a substrate, in which an ablation process is triggered and maintained on a spender target by means of pulsed particles or a laser beams, and the thus developing small droplets are deposited on a heated substrate. The substrate is held at a temperature at which the droplets on impact wet the substrate and coagulate into a uniform smooth film.PP An apparatus for this process comprises an electron source which produces a pulsed electron beam with an electron energy of about 10 to 20 keV and a current density in the range of 10.sup. 3 to 10.sup.4 A/cm.sup.2.
机译:一种在衬底上生产无异相的高三氧化二碳超导体的外延和/或高度织构化的生长膜的方法,其中通过以下方法触发并维持烧蚀目标上的烧蚀过程脉冲颗粒或激光束的沉积,因此形成的小液滴沉积在加热的基材上。将基板保持在一定温度下,在该温度下,冲击时的液滴会润湿基板并凝结成均匀的光滑膜。

用于该过程的设备包括一个电子源,该电子源产生脉冲电子束,其电子能量为大约10至20 keV,电流密度在10.sup范围内。 3至10sup.4 A / cm.sup.2。

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