Process for determination of concentrations of metal impurities in Czochralski single crystal silicon

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  机译： 测定直拉单晶硅中金属杂质浓度的方法

• 4. CONTROL METHOD FOR MANUFACTURING PROCESS OF SILICON SINGLE CRYSTAL BY CZOCHRALSKI METHOD, MANUFACTURING METHOD FOR HIGH RESISTANCE-SILICON SINGLE CRYSTAL BY CZOCHRALSKI METHOD, AND SILICON SINGLE CRYSTAL [P] . 日本专利： JP2002226295A . 2002-08-14

  机译： 直晶硅法制造硅单晶的控制方法，直晶硅法制造高电阻硅单晶的方法以及硅单晶

• 5. METHOD OF SETTING CONDITIONS FOR PULLING UP SILICON SINGLE CRYSTAL BY CZOCHRALSKI PROCESS, AND DEVICE FOR PULLING UP SINGLE CRYSTAL SILICON EQUIPPED WITH THE METHOD OF THE CZOCHRALSKI PROCESS [P] . 日本专利： JP2010168248A . 2010-08-05

  机译： 设置Czochralski过程上拉单晶硅的条件的方法，以及配备Czochralski过程的上拉单晶硅的装置

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• 4. Effect of Location of Zero Gauss Plane on Oxygen Concentration at Crystal Melt Interface During Growth of Magnetic Silicon Single Crystal Using Czochralski Technique [O] . Vegad Mitesh, Bhatt N.M. 2016

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