首页> 外国专利> APPARATUS FOR SILICON WEB GROWTH OF HIGHER OUTPUT AND IMPROVED GROWTH STABILITY

APPARATUS FOR SILICON WEB GROWTH OF HIGHER OUTPUT AND IMPROVED GROWTH STABILITY

机译:提高产量的硅纤维生长和改善的生长稳定性的装置

摘要

This disclosure describes an apparatus to improve the web growth attainable from prior web growth configurations. This apparatus modifies the heat loss at the growth interface in a manner that minimizes thickness variations across the web, especially regions of the web adjacent to the two bounding dendrites. In the unmodified configuration, thinned regions of web, adjacent to the dendrites, were found to be the origin of crystal degradation which ultimately led to termination of the web growth. According to the present invention, thinning adjacent to the dendrites is reduced and the incidence of crystal degradation is similarly reduced.
机译:本公开描述了一种用于改善可从现有的幅材生长配置获得的幅材生长的设备。该设备以最小化整个纤网的厚度变化的方式改变了生长界面处的热损失,尤其是纤网的邻近两个结合树枝状晶体的区域。在未改性的构型中,发现邻近枝晶的纤网变薄区域是晶体降解的开始,最终导致纤网生长终止。根据本发明,减少了与树枝状晶体相邻的变薄,并且类似地减少了晶体降解的发生。

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