INTERNALLY MATCHED MICROWAVE HIGH POWER FIELD EFFECT TRANSISTOR (FET) DRAIN BIAS CIRCUIT

• 1. 一种大功率场效应晶体管的漏极偏置电路 [P] . 中国专利： CN105680846A . 2016-06-15
• 2. 高功率分布式放大器单片微波集成电路MMIC芯片的芯片外分布式漏极偏置 [P] . 中国专利： CN108292652B . 2021.05.28
• 3. Drain bias circuit for a field effect transistors (fets) of the power high, a microwave frequencies and adapted internally. [P] . 法国专利： FR2658012B1 . 1995-07-21

  机译： 用于功率高，微波频率高且内部适应的场效应晶体管（FET）的漏极偏置电路。

• 4. Drain bias circuit for high power microwave field effect transistors (FETS) having internal matching [P] . 美国专利： US5206608A . 1993-04-27

  机译： 具有内部匹配的高功率微波场效应晶体管（FET）的漏极偏置电路

• 5. Drain bias circuit for a field effect transistors (fets) of the power high, a microwave frequencies and adapted internally. [P] . 日本专利： JPH04505540A . 1992-09-24

  机译： 用于功率高，微波频率高且内部适应的场效应晶体管（FET）的漏极偏置电路。

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• 4. Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits [D] . Es-Sakhi, Azzedin D. 2013
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• 6. Towards Flexible All-Carbon Electronics: Flexible Organic Field- Effect Transistors and Inverter Circuits Using Solution-Processed All-Graphene Source/Drain/Gate Electrodes [O] . Nano Res, Yongsheng Chen, Yanfei Xu, 2014
• 7. Long Term Reliability Investigations of the MSC-1330Microwave Power Transistor and the AMPAC 1214-30Internally Matched Device. [R] . walshak,louis g. 1975

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