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VAPOR DEPOSITION OF TITANIUM NITRIDE BY COLD WALL CVD REACTOR
VAPOR DEPOSITION OF TITANIUM NITRIDE BY COLD WALL CVD REACTOR
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机译：冷壁CVD反应器气相沉积氮化钛。
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摘要
PURPOSE: To execute vapor deposition without damaging the circuit elements on a cleaned wafer by passing a mixture composed of ammonia and titanium chloride heated to a prescribed temp. on the wafer, thereby forming the blanket layers of titanium nitride. ;CONSTITUTION: The semiconductor wafer 24 is cleaned by exposing the wafer to ozone. Next, the cleaned wafer 24 is loaded into a cold wall CVD chamber 10. Atmosphere gases are sucked out of the chamber 10 via exhaust valves 34, 36, 40. The wafer 24 is then heated and treating gases 32 contg. the titanium chloride and the ammonia and a diluting agent selected from hydrogen and/or nitrogen are passed thereon at ≥250°C.;COPYRIGHT: (C)1991,JPO
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