首页> 外国专利> A photoelectric component, essentially consisting of a doped or undoped multicomponent semiconductor which has a gradient of at least one component or at least one dopant

A photoelectric component, essentially consisting of a doped or undoped multicomponent semiconductor which has a gradient of at least one component or at least one dopant

机译:一种光电组件,主要由掺杂或未掺杂的多组分半导体组成,该半导体具有至少一种组分或至少一种掺杂剂的梯度

摘要

The invention proposes, as the simplest corresponding component, a thin film applied to a substrate, e.g. made of glass. In this context, the thin layer may consist, e.g., of doped gallium arsenide. Let two electrodes be applied to the gallium arsenide layer at a spacing of, e.g., 1 cm, and let the gallium arsenide layer, in the zone between the electrodes, have a pronounced stoichiometric gradient, i.e. a change in the ratio of Ga to As. Under illumination it is now possible to measure at the electrodes a voltage of a clear few volts. One of the fabrication methods proposed for the thin gallium arsenide film is cathode sputtering (cathodic sputtering). IMAGE
机译:作为最简单的相应组件,本发明提出了一种施加在例如衬底上的薄膜。由玻璃制成。在这种情况下,薄层可以由例如掺杂的砷化镓组成。假设两个电极以例如1 cm的间距施加到砷化镓层上,并让两个电极之间的区域中的砷化镓层具有明显的化学计量梯度,即Ga与As的比率发生变化。在照明下,现在可以在电极上测量几伏特的电压。提出的用于砷化镓薄膜的制造方法之一是阴极溅射(阴极溅射)。 <图像>

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