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Non-electrochemical production of chemically selective layers in suspended-gate field-effect transistors

机译：悬浮栅场效应晶体管中化学选择性层的非电化学生产

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摘要

The incorporation of chemically selective layers in the gate structure of suspended-gate field-effect transistors (SGFET), that is to say transistors having an air gap between gate insulator and gate electrode, is traditionally carried out by electrochemical deposition. This restricts the number of possible chemically sensitive materials which can be used in these components. The present invention describes the production method which allows non-electrochemical deposition of any chosen chemically selective layer before completion of the gate structure.

机译：传统上，通过化学沉积将化学选择层结合到悬浮栅场效应晶体管（SGFET）的栅极结构中，也就是说，在栅绝缘体和栅电极之间具有气隙的晶体管。这限制了可以在这些组件中使用的可能的化学敏感材料的数量。本发明描述了一种制造方法，其允许在完成栅极结构之前非电化学沉积任何选择的化学选择性层。

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公开/公告号DE3834189C1

专利类型
公开/公告日1990-02-15

原文格式PDF
申请/专利权人 EISELE IGNAZ PROF. DR. 8021 ICKING DE;LORENZ HERIBERT 8028 TAUFKIRCHEN DE;
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申请/专利号DE19883834189
发明设计人 PESCHKE MATTHIAS 8028 TAUFKIRCHEN DE;RIESS HANSJUERGEN 8050 FREISING DE;EISELE IGNAZ 8021 ICKING DE;LORENZ HERIBERT;JANATA JIRI SALT LAKE CITY UTAH US;LEVY MAX ESSEX JUNCTION VT. US;
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申请日1988-10-07
分类号G01N27/12;C23C16/00;C23C4/00;C23C14/00;H01L29/78;C23F1/12;
国家 DE
入库时间 2022-08-22 06:10:25

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