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Direct Monitoring A horizontal Bridgman single crystal growth device using an electric furnace
Direct Monitoring A horizontal Bridgman single crystal growth device using an electric furnace
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机译:直接监视使用电炉的水平Bridgman单晶生长装置
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摘要
The apparatus for growing up the single crystal of the chemical semiconductor e.g. InP, CdTe, or GaAs equips a cylindrical dual crystal tube (40). The tube comprises a supporting crystal tube (27) on which a wire heater (36) is wound, and a protecting crystal tube (37). The outer wall of the tube (40) is connected to inlet (38) and outlet (39) for coolant circulation, and the inner wall is coated by a gold thin film (41). The furnaces for high temp. (28) and low temp. (29) are installed around the supporting tube (27), then the rapid heating up to 1,240 degree t. or cooling is possible in short time. The heater (36) is coated by an alumina powder.
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