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METHOD OF INTRODUCING IMPURITIES TO SEMICONDUCTOR FILM INCLUDING HYDROGEN
METHOD OF INTRODUCING IMPURITIES TO SEMICONDUCTOR FILM INCLUDING HYDROGEN
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机译：在包含氢的半导体膜中引入杂质的方法
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摘要
PURPOSE:To diffuse an impurity efficiently by executing heat treatment at a high temperature for removing hydrogen to a semiconductor film containing hydrogen. CONSTITUTION:When a semiconductor film such as a polycrystalline silicon film 7 is formed normally onto a substrate 1 through a CVD method, a large quantity of hydrogen are included in the polycrystalline silicon film 7 because the hydride of silicon and a gas containing hydrogen are used as a raw material gas. The hydrogen contained is volatilized and removed from the surface of the polycrystalline silicon film 7 through heat treatment at a temperature higher than the forming temperature of the polycrystalline silicon film 7 such as 600 deg.C or more. Consequently, when a silicon oxide film 8 to which an impurity is added is shaped onto the polycrystalline silicon film 7 and the impurity is diffused to the polycrystalline silicon film 7, hydrogen from the polycrystalline silicon film 7 is not bonded with the impurity in the silicon oxide film 8. Accordingly, the impurity is diffused efficiently.
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