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TERMINAL DETECTION IN RESIST DEVELOPMENT
TERMINAL DETECTION IN RESIST DEVELOPMENT
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机译：抵抗发展中的终端探测
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摘要
PURPOSE:To enable the development time to be controlled accurately by a method wherein a semiconductor wafer is irradiated with rays and the periodical times of the changes in luminous intensity of interference ray in the reflected ray on the surface of a resist film 7 and that on the surface of the semiconductor wafer are computed to decide the termination of development. CONSTITUTION:The periodical time 41TR of the changes in luminous intensity of red colored interference ray is computed from the maximum and the minimum of the changes furthermore the periodical time 51 TG as to green colored interference ray is also computed. Besides, no more changes in the red and green colored luminous intensity are recognized by a microcomputer 16. Then, the termination of development is decided by the time 62te exceeding the time 61td when a resist film is actually vanished by the advanced development within the time region wherein the luminous intensity is kept unchanged among the times e.g., integer times of respective periodical times 41TR, 51TG based on the results of said computations. Through these procedures, the termination of development can be decided accurately even if the development processing requirements are changed by detecting the termination of development while checking and coping with the advancing state of development.
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