首页> 外国专利> PERFECTED SEMICONDUCTOR STRUCTURE, PERFECTED PHOTOSENSITIVE DEVICE, PROCESS OF DEPOSITING A PERFECTED SEMICONDUCTOR ON A SUBSTRATE AND APPLIANCE FOR DEPOSITION OF A PERFECTED SEMICONDUCTOR

PERFECTED SEMICONDUCTOR STRUCTURE, PERFECTED PHOTOSENSITIVE DEVICE, PROCESS OF DEPOSITING A PERFECTED SEMICONDUCTOR ON A SUBSTRATE AND APPLIANCE FOR DEPOSITION OF A PERFECTED SEMICONDUCTOR

机译:完善的半导体结构,完善的光敏器件,在基材上沉积完善的半导体的过程以及用于沉积完善的半导体的设备

摘要

A new class of synthesized semiconducting multiple layer materials, structures, and devices and apparatus and methods for synthesizing the structures. At least one layer (138a) of the multiple layer structure (138) is a disordered semiconductor material. Multiple layer structures can form one or more regions of improved photoresponsive and photovoltaic single and tandem cells, thin film transistors and thermoelectric devices. The multiple layer structures provide a means of electronically doping semiconductor device structures without adding substitutional dopant impurities.
机译:一类新的合成半导体多层材料,结构以及用于合成该结构的装置和装置及方法。多层结构(138)的至少一层(138a)是无序的半导体材料。多层结构可以形成改进的光敏和光伏单电池和串联电池,薄膜晶体管和热电器件的一个或多个区域。多层结构提供了一种电子掺杂半导体器件结构的方法,而不添加替代性掺杂剂杂质。

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