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Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features
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机译：通过反应性氧离子蚀刻形成侧壁氧化层以定义亚微米特征
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摘要
This invention involves the defining of a submicron feature (21 or 93) in a structure, typically an insulated gate field effect transistor structure (30, 40, or 110). This feature is defined by a sidewall oxide protective masking layer (21 or 71) formed by reactive oxygen ion etching of the structure being built at a time when an exposed surface thereof in the vicinity of the sidewall contains atoms of a material--for example, silicon or aluminum--which combine with the oxygen ions to form the sidewall oxide layer.
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