ELECTRON IRRADIATION OF HIGH LEVEL TRANSISTORS

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• 2. 一种基于辐照直线加速器的大功率高能电子辐照站 [P] . 中国专利： CN213277478U . 2021-05-25
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  机译： 高能晶体管的电子辐照

• 4. ELECTRIC FIELD ELECTRON EMITTING ELEMENT, PICTURE DISPLAY DEVICE, ELECTRON BEAM IRRADIATION DEVICE, FIELD EMISSION TRANSISTOR, AND CARBON MATERIAL FOR ELECTRIC FIELD ELECTRON EMITTING ELEMENT [P] . 日本专利： JP2005209551A . 2005-08-04

  机译： 电场电子发射元件，图像显示装置，电子束照射装置，场发射晶体管以及用于电场电子发射元件的碳材料

• 5. METHOD FOR MANUFACTURING METAL OXIDE FILM METAL OXIDE FILM THIN-FILM TRANSISTOR METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR ELECTRONIC DEVICE AND ULTRAVIOLET IRRADIATION DEVICE [P] . 韩国专利： KR101954551B1 . 2019-03-05

  机译： 金属氧化物膜薄膜晶体管的制造方法金属膜薄膜晶体管电子装置及紫外线照射装置的制造方法

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• 7. Defect Energy Levels in Boron-Doped Silicon Irradiated with 1-MeV Electrons. [R] . Mooney, P. M., Cheng, L. J., Suli, M., 1976

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