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Ridge waveguide-to-microstrip line transition for high frequency amplifier

机译:高频放大器的脊形波导至微带线过渡

摘要

The ridge waveguide-to-microstrip line transition for an amplifier (4) connects a microstrip circuit (30) with a ridge waveguide (22) having a waveguide body (22') and a ridge (22H). This transition has a simple construction and comprises bias supply means for supplying the amplifier with a d.c. bias voltage, and a thin layer (26) of an insulating means interposed between said waveguide body (22') and the ridge (22") to block the supply of said d.c. bias voltage to said waveguide body (22').;The ridge (22") may be provided with means (23 to 25) for connecting it with said bias supply means, said connecting means (23 to 25) extending throughout said insulating means (26) to project from said waveguide body (22').
机译:用于放大器(4)的脊形波导至微带线的过渡将微带电路(30)与具有波导主体(22')和脊形(22 H )。该过渡具有简单的结构,并包括用于向放大器提供直流电的偏置供应装置。偏置电压,和一个绝缘装置的薄层(26)插在所述波导主体(22')和脊(22'')之间,以阻止向所述波导主体(22')提供所述dc偏置电压。脊(22”)可以设置有用于将其与所述偏压供给装置连接的装置(23至25),所述连接装置(23至25)延伸穿过所述绝缘装置(26)以从所述波导主体(22')突出。 。

著录项

  • 公开/公告号EP0074613A1

    专利类型

  • 公开/公告日1983-03-23

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号EP19820108267

  • 发明设计人 NAGATA EIJIC/O NIPPON ELECTRIC CO. LTD.;

    申请日1982-09-08

  • 分类号H01P5/107;

  • 国家 EP

  • 入库时间 2022-08-22 10:32:03

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