首页> 外国专利> halfgeleiderinrichting,in a comprehensive hoofdoppervlak halfgeleiderlichaam geleidingstype formed with a first row of semiconductor devices comprising at least a first and a second basiscontactgebied with the first geleidingstype and with a higher conductivity than the halfgeleiderlichaam and from a relatively small emittergebied with the first geleidingstype opposite second yellowidingstype and a stroomgestuurde negative weerstandskarakteristiek between the first and the emittergebied basiscontactgebied showwhen a instelvoedingsbron is connected between the first and the second basiscontactgebied and beeldopneeminrichting fitted with such a halfgeleiderinrichting.

halfgeleiderinrichting,in a comprehensive hoofdoppervlak halfgeleiderlichaam geleidingstype formed with a first row of semiconductor devices comprising at least a first and a second basiscontactgebied with the first geleidingstype and with a higher conductivity than the halfgeleiderlichaam and from a relatively small emittergebied with the first geleidingstype opposite second yellowidingstype and a stroomgestuurde negative weerstandskarakteristiek between the first and the emittergebied basiscontactgebied showwhen a instelvoedingsbron is connected between the first and the second basiscontactgebied and beeldopneeminrichting fitted with such a halfgeleiderinrichting.

机译：在由至少第一和第二基本半导体接触形成的第一行半导体器件中形成的全面霍夫多普法克半吉利德型凝胶，该第一行和第二基极接触与第一吉利德型混合，并且导电率高于半吉利德型，并且相对较小的发射体与第一吉利德型相对，第二黄变相反当在第一个和第二个基础接触之间连接一个插接的sbron时，在第一个和第二个基础接触之间就形成了一个绝热负的weerstandskarakteristiek，显示了这种半geleideriderrichting。

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摘要

A semiconductor device having a plurality of semiconductor elements formed in a monolithic manner in a semiconductor wafer of a first conductivity type while being sequentially arranged, in which each of the plurality of semiconductor elements consists of at least a collector region formed in the semiconductor wafer and having the first conductivity type and higher conductivity than the semiconductor wafer, a base region formed in the semiconductor wafer and having the first conductivity type and higher conductivity than the semiconductor wafer, and a relatively small emitter region formed in the semiconductor wafer between the base and collector regions and having a second conductivity type, at least the emitter region of each semiconductor element being adapted for exclusive use therewith and each semiconductor element presenting a current controlled negative resistance characteristic between the emitter and collector regions with a biasing power source being applied between the base and collector regions, and in which the distance between two adjacent ones of the semiconductor elements is selected so that when one of the two adjacent semiconductor elements is in the on state with the biasing power source being applied between the base and collector regions of the two semiconductor elements, the turnover voltage of the other semiconductor element may become low. A shift register, photoelectric conversion apparatus, logic functional circuit or apparatus and so on which employ such a semiconductor device.

机译：一种半导体器件，其具有依次排列在第一导电类型的半导体晶片中以单片方式形成的多个半导体元件，其中，所述多个半导体元件中的每一个均至少包括形成在所述半导体晶片中的集电极区和具有第一导电类型和比半导体晶片更高的导电性，形成在半导体晶片中并且具有第一导电类型和比半导体晶片更高的导电性的基极区域，以及形成在半导体晶片中的在基极和衬底之间的相对小的发射极区域。集电极区域具有第二导电类型，至少每个半导体元件的发射极区域专用于此，并且每个半导体元件在发射极区域和集电极区域之间呈现电流控制的负电阻特性，并且在该发射极区域和集电极区域之间施加偏置电源。基础选择两个相邻的半导体元件之间的距离，使得当两个相邻的半导体元件之一处于导通状态时，在两个基极和集电极区域之间施加偏置电源时半导体元件，另一半导体元件的翻转电压可能变低。使用这种半导体器件的移位寄存器，光电转换设备，逻辑功能电路或设备等。

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公开/公告号NL173112B

专利类型
公开/公告日1983-07-01

原文格式PDF
申请/专利权人 NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION TE TOKIO.;
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申请/专利号NL19720004667
发明设计人 TOSHIMASA SUZUKI TE KOKUBUNJI;YOSHIHIKO MIZUSHIMA TE FUCHU;JAPAN.;
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申请日1972-04-07
分类号H01L27/06;G11C19/28;H01L31/06;H04N3/15;
国家 NL
入库时间 2022-08-22 11:06:30

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